<br>Hynix Semiconductor ha annunciato i nuovi moduli di memoria Registered-Dimm, con capacità di 4GB, e SO-Dimm, da 2GB, DDR2 a 533MHz.<p>
Caratteristiche tecniche:<br>
VDD = 1.8V, VDDQ = 1.8V <br>
I/O = SSTL_18<br> 
533Mbps/pin linear throughput<br> 
Up to 4,300MB/s performance in 64-bit systems<br> 
4 and 8 packet lengths<br> 
WRITE latency = READ latency = 1 clock<br> 
Differential strobe<br> 
Off-chip output driver calibration (OCD)<br> 
On-die termination (ODT)<p>
<center><img src="http://www.amdplanet.it/art_img/jaber-news/Hynix4Grdimm.jpg"></center><p>
			